News - Génération in situ de dopants de type N par décarboxylation thermo-activée

Le développement de dopants de type N améliorant les propriétés électroniques des semi-conducteurs organiques a été entravé par leur faible stabilité et leur forte réactivité à l’air. Des chercheurs de l’équipe du Prof. Heeney et de l’équipe PCR ont démontré que des précurseurs de dopants, carboxylés et stables à l’air, peuvent surmonter ce défi. Les dopants actifs de type N sont facilement générés par décarboxylation sous activation thermique et améliorent avec succès les performances de transistors à effet de champ organiques (OFET)

Résumé: Molecular doping is a powerful and increasingly popular approach toward enhancing electronic properties of organic semiconductors (OSCs) past their intrinsic limits. The development of n-type dopants has been hampered, however, by their poor stability and high air-reactivity, a consequence of their generally electron rich nature. Here, the use of air-stable carboxylated dopant precursors is reported to overcome this challenge. Active dopants are readily generated in solution by thermal decarboxylation and applied in n-type organic field-effect transistors (OFETs). Both 1,3-dimethylimidazolium-2-carboxylate (CO2-DMI) and novel dopant 1,3-dimethylbenzimidazolium-2-
carboxy late (CO2-DMBI) are applied to n-type OFETs employing well-known organic semiconductors (OSCs) P(NDI2OD-T2), PCBM, and O-IDTBR. Successful improvement of performance in all devices demonstrates the versatility of the dopants across a variety of OSCs. Experimental and computational studies indicate that electron transfer from the dopant to the host OSC is preceded by decarboxylation of the precursor, followed by dimerization to form the active dopant species. Transistor studies highlight CO2-DMBI as the most effective dopant, improving electron mobility by up to one order of
magnitude, while CO2-DMI holds the advantage of commercial availability.